STU8NM50N

MOSFET N-CH 500V 5A IPAK

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Specifications
Part Number:STU8NM50N
Manufacturer:STMicroelectronics
Description:MOSFET N-CH 500V 5A IPAK
RoHs Status:
Nkesp Part Number:73D-STU8NM50N
Part Status20600 pcs
Manufacturer:STMicroelectronics
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:MDmesh™ II
Rds On (Max) @ Id, Vgs:790mOhm @ 2.5A, 10V
Power Dissipation (Max):45W (Tc)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Package:Tube
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:364 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Base Product Number:STU8N
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In stock: 20600 pcs

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Product Comparison

Part Number STU8NM50N
STU8NM50N
STU8N80K5
STU8N80K5
STU7N80K5
STU7N80K5
STU9N60M2
STU9N60M2
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Vgs(th) (Max) @ Id4V @ 250µA5V @ 100µA5V @ 100µA4V @ 250µA
Drain to Source Voltage (Vdss)500 V800 V800 V600 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Base Product NumberSTU8NSTU8N80STU7N80STU9N60
Rds On (Max) @ Id, Vgs790mOhm @ 2.5A, 10V950mOhm @ 3A, 10V1.2Ohm @ 3A, 10V780mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C5A (Tc)6A (Tc)6A (Tc)5.5A (Tc)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AA
FET Feature----
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V16.5 nC @ 10 V13.4 nC @ 10 V10 nC @ 10 V
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Supplier Device PackageI-PAKTO-251 (IPAK)TO-251 (IPAK)TO-251 (IPAK)
PackageTubeTubeTubeTube
SeriesMDmesh™ IISuperMESH5™SuperMESH5™MDmesh™ II Plus
Vgs (Max)±25V±30V±30V±25V
Power Dissipation (Max)45W (Tc)110W (Tc)110W (Tc)60W (Tc)
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds364 pF @ 50 V450 pF @ 100 V360 pF @ 100 V320 pF @ 100 V

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