STP11NM60

MOSFET N-CH 650V 11A TO220AB

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Specifications
Part Number:STP11NM60
Manufacturer:STMicroelectronics
Description:MOSFET N-CH 650V 11A TO220AB
RoHs Status:
Nkesp Part Number:73D-STP11NM60
Part Status13336 pcs
Manufacturer:STMicroelectronics
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220
Series:MDmesh™
Rds On (Max) @ Id, Vgs:450mOhm @ 5.5A, 10V
Power Dissipation (Max):160W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Base Product Number:STP11
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In stock: 13336 pcs

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Product Comparison

Part Number STP11NM60
STP11NM60
STP11NM80
STP11NM80
STP11NM60A
STP11NM60A
STP11N65M2
STP11N65M2
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Supplier Device PackageTO-220TO-220TO-220TO-220
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 25 V1630 pF @ 25 V1211 pF @ 25 V410 pF @ 100 V
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
PackageTubeTubeTubeTube
Power Dissipation (Max)160W (Tc)150W (Tc)110W (Tc)85W (Tc)
Rds On (Max) @ Id, Vgs450mOhm @ 5.5A, 10V400mOhm @ 5.5A, 10V450mOhm @ 5.5A, 10V670mOhm @ 3.5A, 10V
Drain to Source Voltage (Vdss)650 V800 V600 V650 V
Base Product NumberSTP11STP11STP11NSTP11
Vgs (Max)±25V±30V±30V±25V
Vgs(th) (Max) @ Id5V @ 250µA5V @ 250µA4V @ 250µA4V @ 250µA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesMDmesh™MDmesh™MDmesh™MDmesh™ II Plus
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V43.6 nC @ 10 V49 nC @ 10 V12.5 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)11A (Tc)11A (Tc)7A (Tc)
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET Feature----
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole

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