STL60N10F7

MOSFET N-CH 100V 46A POWERFLAT

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RFQ
Specifications
Part Number:STL60N10F7
Manufacturer:STMicroelectronics
Description:MOSFET N-CH 100V 46A POWERFLAT
RoHs Status:
Nkesp Part Number:73D-STL60N10F7
Part Status24537 pcs
Manufacturer:STMicroelectronics
Vgs(th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerFlat™ (5x6)
Series:DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs:18mOhm @ 6A, 10V
Power Dissipation (Max):5W (Ta), 72W (Tc)
Package / Case:8-PowerVDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Base Product Number:STL60
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In stock: 24537 pcs

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Data sheet

Product Comparison

Part Number STL60N10F7
STL60N10F7
STL57N65M5
STL57N65M5
STL58N3LLH5
STL58N3LLH5
STL56N3LLH5
STL56N3LLH5
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Vgs(th) (Max) @ Id4.5V @ 250µA5V @ 250µA2.5V @ 250µA1V @ 250µA
FET Feature----
Supplier Device PackagePowerFlat™ (5x6)PowerFlat™ (8x8) HVPowerFlat™ (5x6)PowerFlat™ (5x6)
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V110 nC @ 10 V10 nC @ 4.5 V6.5 nC @ 4.5 V
Operating Temperature-55°C ~ 175°C (TJ)150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)10V10V4.5V, 10V4.5V, 10V
Base Product NumberSTL60STL57STL58STL56
Input Capacitance (Ciss) (Max) @ Vds1640 pF @ 50 V4200 pF @ 100 V950 pF @ 25 V950 pF @ 25 V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Rds On (Max) @ Id, Vgs18mOhm @ 6A, 10V69mOhm @ 20A, 10V9mOhm @ 7.5A, 10V9mOhm @ 7.5A, 10V
SeriesDeepGATE™, STripFET™ VIIMDmesh™ VAutomotive, AEC-Q101, STripFET™ H5STripFET™ V
Power Dissipation (Max)5W (Ta), 72W (Tc)2.8W (Ta), 189W (Tc)4.8W (Ta), 62.5W (Tc)62.5W (Tc)
Current - Continuous Drain (Id) @ 25°C46A (Tc)4.3A (Ta), 22.5A (Tc)64A (Tc)56A (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drain to Source Voltage (Vdss)100 V650 V30 V30 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)20V±25V+22V, -20V+22V, -20V
Package / Case8-PowerVDFN8-PowerVDFN8-PowerVDFN8-PowerVDFN

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