STL26NM60N

MOSFET N-CH 600V 19A POWERFLAT

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Specifications
Part Number:STL26NM60N
Manufacturer:STMicroelectronics
Description:MOSFET N-CH 600V 19A POWERFLAT
RoHs Status:
Nkesp Part Number:73D-STL26NM60N
Part Status9822 pcs
Manufacturer:STMicroelectronics
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerFlat™ (8x8) HV
Series:MDmesh™ II
Rds On (Max) @ Id, Vgs:185mOhm @ 10A, 10V
Power Dissipation (Max):125mW (Ta), 3W (Tc)
Package / Case:8-PowerVDFN
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta), 19A (Tc)
Base Product Number:STL26
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In stock: 9822 pcs

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Data sheet

Product Comparison

Part Number STL26NM60N
STL26NM60N
STL25N15F4
STL25N15F4
STL25N60M2-EP
STL25N60M2-EP
STL26N30M8
STL26N30M8
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Power Dissipation (Max)125mW (Ta), 3W (Tc)80W (Tc)125W (Tc)114W (Tc)
FET Feature----
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V48 nC @ 10 V29 nC @ 10 V30.8 nC @ 10 V
SeriesMDmesh™ IIDeepGATE™, STripFET™MDmesh™ M2-EPMDmesh™ M8
Drain to Source Voltage (Vdss)600 V150 V600 V300 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 50 V2710 pF @ 25 V1090 pF @ 100 V1430 pF @ 100 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta), 19A (Tc)25A (Tc)16A (Tc)23A (Tc)
Rds On (Max) @ Id, Vgs185mOhm @ 10A, 10V63mOhm @ 3A, 10V205mOhm @ 8A, 10V89mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA4V @ 250µA4.75V @ 250µA5V @ 250µA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Base Product NumberSTL26STL25STL25STL26
Package / Case8-PowerVDFN8-PowerVDFN8-PowerVDFN8-PowerVDFN
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Vgs (Max)±30V±20V±25V±25V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Supplier Device PackagePowerFlat™ (8x8) HVPowerFlat™ (5x6)PowerFlat™ (8x8) HVPowerFlat™ (5x6)

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