STL11N60M2-EP

MOSFET N-CH 600V POWERFLAT HV

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Specifications
Part Number:STL11N60M2-EP
Manufacturer:STMicroelectronics
Description:MOSFET N-CH 600V POWERFLAT HV
RoHs Status:
Nkesp Part Number:73D-STL11N60M2-EP
Part Status4723 pcs
Manufacturer:STMicroelectronics
Vgs(th) (Max) @ Id:-
Vgs (Max):-
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerFlat™ (5x6) HV
Series:MDmesh™ M2-EP
Rds On (Max) @ Id, Vgs:-
Power Dissipation (Max):-
Package / Case:8-PowerVDFN
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Base Product Number:STL11
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In stock: 4723 pcs

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Product Comparison

Part Number STL11N60M2-EP
STL11N60M2-EP
STL11N6F7
STL11N6F7
STL10N60M6
STL10N60M6
STL120N10F8
STL120N10F8
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Power Dissipation (Max)-2.9W (Ta), 48W (Tc)48W (Tc)150W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Base Product NumberSTL11STL11STL10-
SeriesMDmesh™ M2-EPSTripFET™MDmesh™ M6-
Vgs (Max)-±20V±25V±20V
Supplier Device PackagePowerFlat™ (5x6) HVPowerFlat™ (3.3x3.3)PowerFlat™ (5x6) HV-
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Package / Case8-PowerVDFN8-PowerVDFN8-PowerVDFN8-PowerVDFN
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)11A (Ta)5.5A (Tc)125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-10V10V10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs(th) (Max) @ Id-4V @ 250µA4.75V @ 250µA4V @ 250µA
Rds On (Max) @ Id, Vgs-12mOhm @ 5.5A, 10V660mOhm @ 2.75A, 10V4.6mOhm @ 60A, 10V
Drain to Source Voltage (Vdss)600 V60 V600 V100 V
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
FET Feature----

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