STL11N3LLH6

MOSFET N-CH 30V 11A POWERFLAT

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RFQ
Specifications
Part Number:STL11N3LLH6
Manufacturer:STMicroelectronics
Description:MOSFET N-CH 30V 11A POWERFLAT
RoHs Status:
Nkesp Part Number:73D-STL11N3LLH6
Part Status25303 pcs
Manufacturer:STMicroelectronics
Vgs(th) (Max) @ Id:1V @ 250µA (Min)
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerFlat™ (3.3x3.3)
Series:DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs:7.5mOhm @ 5.5A, 10V
Power Dissipation (Max):2W (Ta), 50W (Tc)
Package / Case:8-PowerVDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1690 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Base Product Number:STL11
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In stock: 25303 pcs

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Data sheet

Product Comparison

Part Number STL11N3LLH6
STL11N3LLH6
STL10N60M2
STL10N60M2
STL120N4F6AG
STL120N4F6AG
STL115N10F7AG
STL115N10F7AG
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Vgs(th) (Max) @ Id1V @ 250µA (Min)4V @ 250µA4V @ 250µA4.5V @ 250µA
Supplier Device PackagePowerFlat™ (3.3x3.3)PowerFlat™ (5x6) HVPowerFlat™ (5x6)PowerFlat™ (5x6)
Power Dissipation (Max)2W (Ta), 50W (Tc)48W (Tc)96W (Tc)136W (Tc)
Package / Case8-PowerVDFN8-PowerVDFN8-PowerVDFN8-PowerVDFN
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Operating Temperature-55°C ~ 150°C (TJ)150°C (TJ)175°C (TJ)-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs7.5mOhm @ 5.5A, 10V660mOhm @ 2.5A, 10V3.6mOhm @ 13A, 10V6mOhm @ 53A, 10V
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds1690 pF @ 24 V400 pF @ 100 V3700 pF @ 25 V5600 pF @ 50 V
Vgs (Max)±20V±25V±20V±20V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V10V10V10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Base Product NumberSTL11STL10STL120STL115
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeSurface MountSurface MountSurface MountSurface Mount, Wettable Flank
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V13.5 nC @ 10 V63 nC @ 10 V72.5 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)5.5A (Tc)55A (Tc)107A (Tc)
Drain to Source Voltage (Vdss)30 V600 V40 V100 V
SeriesDeepGATE™, STripFET™ VIMDmesh™ II PlusAutomotive, AEC-Q101, STripFET™ F6Automotive, AEC-Q101, STripFET™ F7

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