STI28N60M2

MOSFET N-CH 600V 22A I2PAK

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Specifications
Part Number:STI28N60M2
Manufacturer:STMicroelectronics
Description:MOSFET N-CH 600V 22A I2PAK
RoHs Status:
Nkesp Part Number:73D-STI28N60M2
Part Status15520 pcs
Manufacturer:STMicroelectronics
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK (TO-262)
Series:MDmesh™ M2
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Power Dissipation (Max):170W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Base Product Number:STI28
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In stock: 15520 pcs

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Product Comparison

Part Number STI28N60M2
STI28N60M2
STI35N65M5
STI35N65M5
STI33N60M6
STI33N60M6
STI24N60M2
STI24N60M2
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Input Capacitance (Ciss) (Max) @ Vds1440 pF @ 100 V3750 pF @ 100 V1515 pF @ 100 V1060 pF @ 100 V
Vgs (Max)±25V±25V±25V±25V
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V83 nC @ 10 V33.4 nC @ 10 V29 nC @ 10 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Vgs(th) (Max) @ Id4V @ 250µA5V @ 250µA4.75V @ 250µA4V @ 250µA
FET Feature----
Drain to Source Voltage (Vdss)600 V650 V600 V600 V
Current - Continuous Drain (Id) @ 25°C22A (Tc)27A (Tc)25A (Tc)18A (Tc)
Rds On (Max) @ Id, Vgs150mOhm @ 11A, 10V98mOhm @ 13.5A, 10V125mOhm @ 12.5A, 10V190mOhm @ 9A, 10V
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AA
SeriesMDmesh™ M2MDmesh™ VMDmesh™ M6MDmesh™ II Plus
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Operating Temperature-55°C ~ 150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Power Dissipation (Max)170W (Tc)160W (Tc)190W (Tc)150W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
PackageTubeTubeTubeTube
Supplier Device PackageI2PAK (TO-262)I2PAKI2PAK (TO-262)I2PAK (TO-262)
Base Product NumberSTI28STI35NSTI33STI24

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