STH80N10F7-2

MOSFET N-CH 100V 80A H2PAK-2

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RFQ
Specifications
Part Number:STH80N10F7-2
Manufacturer:STMicroelectronics
Description:MOSFET N-CH 100V 80A H2PAK-2
RoHs Status:
Nkesp Part Number:73D-STH80N10F7-2
Part Status3221 pcs
Manufacturer:STMicroelectronics
Vgs(th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:H2Pak-2
Series:DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs:9.5mOhm @ 40A, 10V
Power Dissipation (Max):110W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Base Product Number:STH80N
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In stock: 3221 pcs

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Product Comparison

Part Number STH80N10F7-2
STH80N10F7-2
STH315N10F7-6
STH315N10F7-6
STH400N4F6-6
STH400N4F6-6
STH30N65DM6-7AG
STH30N65DM6-7AG
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Current - Continuous Drain (Id) @ 25°C80A (Tc)180A (Tc)180A (Tc)28A (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA4.5V @ 250µA4.5V @ 250µA4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V180 nC @ 10 V404 nC @ 10 V46 nC @ 10 V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-7, D²Pak (6 Leads + Tab)TO-263-7, D²Pak (6 Leads + Tab)TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device PackageH2Pak-2H2PAK-6H2PAK-6H2PAK-7
Power Dissipation (Max)110W (Tc)315W (Tc)300W (Tc)223W (Tc)
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 50 V12800 pF @ 25 V20500 pF @ 25 V2000 pF @ 100 V
Drain to Source Voltage (Vdss)100 V100 V40 V650 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Vgs (Max)±20V±20V±20V±25V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs9.5mOhm @ 40A, 10V2.3mOhm @ 60A, 10V1.15mOhm @ 60A, 10V115mOhm @ 10A, 10V
SeriesDeepGATE™, STripFET™ VIIAutomotive, AEC-Q101, DeepGATE™, STripFET™ VIIAutomotive, AEC-Q101, DeepGATE™, STripFET™ VIAutomotive, AEC-Q101, MDmesh™ DM2
Base Product NumberSTH80NSTH315STH400-

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