STF10N65K3

MOSFET N-CH 650V 10A TO220FP

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Specifications
Part Number:STF10N65K3
Manufacturer:STMicroelectronics
Description:MOSFET N-CH 650V 10A TO220FP
RoHs Status:
Nkesp Part Number:73D-STF10N65K3
Part Status21082 pcs
Manufacturer:STMicroelectronics
Vgs(th) (Max) @ Id:4.5V @ 100µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220FP
Series:SuperMESH3™
Rds On (Max) @ Id, Vgs:1Ohm @ 3.6A, 10V
Power Dissipation (Max):35W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Base Product Number:STF10
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In stock: 21082 pcs

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Product Comparison

Part Number STF10N65K3
STF10N65K3
STF10NM60N
STF10NM60N
STF10N95K5
STF10N95K5
STF10LN80K5
STF10LN80K5
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Power Dissipation (Max)35W (Tc)25W (Tc)30W (Tc)25W (Tc)
PackageTubeTubeTubeTube
Base Product NumberSTF10STF10STF10STF10
Vgs (Max)±30V±25V±30V±30V
Current - Continuous Drain (Id) @ 25°C10A (Tc)10A (Tc)8A (Tc)8A (Tc)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Supplier Device PackageTO-220FPTO-220FPTO-220FPTO-220FP
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
SeriesSuperMESH3™MDmesh™ IISuperMESH5™MDmesh™
Rds On (Max) @ Id, Vgs1Ohm @ 3.6A, 10V550mOhm @ 4A, 10V800mOhm @ 4A, 10V630mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V19 nC @ 10 V22 nC @ 10 V15 nC @ 10 V
Vgs(th) (Max) @ Id4.5V @ 100µA4V @ 250µA5V @ 100µA5V @ 100µA
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Drain to Source Voltage (Vdss)650 V600 V950 V800 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds1180 pF @ 25 V540 pF @ 50 V630 pF @ 100 V427 pF @ 100 V
FET Feature----

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