SSW7N60BTM

N-CHANNEL POWER MOSFET

Quantity
RFQ
Specifications
Part Number:SSW7N60BTM
Manufacturer:Fairchild Semiconductor
Description:N-CHANNEL POWER MOSFET
RoHs Status:
Nkesp Part Number:73D-SSW7N60BTM
Part Status25848 pcs
Manufacturer:Fairchild Semiconductor
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:-
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3.5A, 10V
Power Dissipation (Max):3.13W (Ta), 147W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)

In stock: 25848 pcs

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Product Comparison

Part Number SSW7N60BTM
SSW7N60BTM
GSFN3906
GSFN3906
RM120N30DF
RM120N30DF
2SK3662(F)
2SK3662(F)
ManufacturerFairchild SemiconductorGood-Ark SemiconductorRectron USAToshiba Semiconductor and Storage
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Series---U-MOSIII
Supplier Device PackageD2PAK8-PPAK (3x3)8-DFN (5x6)TO-220NIS
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V4.5V, 10V4V, 10V
Vgs(th) (Max) @ Id4V @ 250µA2.5V @ 250µA2.2V @ 250µA2.5V @ 1mA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Rds On (Max) @ Id, Vgs1.2Ohm @ 3.5A, 10V6mOhm @ 20A, 10V2.35mOhm @ 60A, 10V12.5mOhm @ 18A, 10V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB8-PowerVDFN8-PowerVDFNTO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C7A (Tc)60A (Tc)120A (Tc)35A (Ta)
Mounting TypeSurface MountSurface MountSurface MountThrough Hole
Power Dissipation (Max)3.13W (Ta), 147W (Tc)45W (Tc)75W (Tc)35W (Tc)
PackageBulkTape & Reel (TR)Tape & Reel (TR)Bulk
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V18 nC @ 4.5 V-91 nC @ 10 V
Drain to Source Voltage (Vdss)600 V30 V30 V60 V
Vgs (Max)±30V±20V±20V±20V
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 25 V1800 pF @ 25 V4200 pF @ 15 V5120 pF @ 10 V

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