SSM6N16FE,L3F

SMALL SIGNAL MOSFET N-CH X 2 VDS

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Specifications
Part Number:SSM6N16FE,L3F
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:SMALL SIGNAL MOSFET N-CH X 2 VDS
RoHs Status:
Nkesp Part Number:73D-SSM6N16FE,L3F
Part Status257637 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:1.1V @ 100µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:ES6
Series:-
Rds On (Max) @ Id, Vgs:3Ohm @ 10mA, 4V
Power - Max:150mW (Ta)
Package / Case:SOT-563, SOT-666
Package:Tape & Reel (TR)
Operating Temperature:150°C
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:9.3pF @ 3V
Gate Charge (Qg) (Max) @ Vgs:-
FET Feature:-
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
Configuration:2 N-Channel (Dual)
Base Product Number:SSM6N16

In stock: 257637 pcs

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Toshiba Semiconductor and Storage
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Product Comparison

Part Number SSM6N16FE,L3F
SSM6N16FE,L3F
SSM6N24TU,LF
SSM6N24TU,LF
SSM6N16FUTE85LF
SSM6N16FUTE85LF
SSM6L807R,LF
SSM6L807R,LF
ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Package / CaseSOT-563, SOT-6666-SMD, Flat Leads6-TSSOP, SC-88, SOT-3636-SMD, Flat Leads
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)N and P-Channel
Current - Continuous Drain (Id) @ 25°C100mA (Ta)500mA (Ta)100mA4A (Ta)
Base Product NumberSSM6N16SSM6N24SSM6N16SSM6L807
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Gate Charge (Qg) (Max) @ Vgs---3.2nC @ 4.5V, 6.74nC @ 4.5V
Supplier Device PackageES6UF6US66-TSOP-F
Vgs(th) (Max) @ Id1.1V @ 100µA1.1V @ 100µA1.1V @ 100µA1V @ 1mA
Operating Temperature150°C150°C150°C (TJ)150°C
Rds On (Max) @ Id, Vgs3Ohm @ 10mA, 4V145mOhm @ 500mA, 4.5V3Ohm @ 10mA, 4V39.1mOhm @ 2A, 4.5V
Series-U-MOSIII--
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Power - Max150mW (Ta)500mW (Ta)200mW1.4W (Ta)
Drain to Source Voltage (Vdss)20V30V20V30V
Input Capacitance (Ciss) (Max) @ Vds9.3pF @ 3V245pF @ 10V9.3pF @ 3V310pF @ 15V, 480pF @ 10V
FET Feature---Standard

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