SSM3J168F,LF

MOSFET P-CH 60V 400MA S-MINI

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RFQ
Specifications
Part Number:SSM3J168F,LF
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:MOSFET P-CH 60V 400MA S-MINI
RoHs Status:
Nkesp Part Number:73D-SSM3J168F,LF
Part Status138350 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:2V @ 1mA
Vgs (Max):+20V, -16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3
Series:U-MOSVI
Rds On (Max) @ Id, Vgs:1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max):1.2W (Ta)
Package / Case:TO-236-3, SC-59, SOT-23-3
Package:Tape & Reel (TR)
Operating Temperature:150°C
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:82 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:3 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
Base Product Number:SSM3J168

In stock: 138350 pcs

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Product Comparison

Part Number SSM3J168F,LF
SSM3J168F,LF
SSM3J15FV,L3F
SSM3J15FV,L3F
SSM3J144TU,LXHF
SSM3J144TU,LXHF
SSM3J15FS,LF
SSM3J15FS,LF
ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Drive Voltage (Max Rds On, Min Rds On)4V, 10V2.5V, 4V1.5V, 4.5V2.5V, 4V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Input Capacitance (Ciss) (Max) @ Vds82 pF @ 10 V9.1 pF @ 3 V290 pF @ 10 V9.1 pF @ 3 V
Drain to Source Voltage (Vdss)60 V30 V20 V30 V
Package / CaseTO-236-3, SC-59, SOT-23-3SOT-7233-SMD, Flat LeadsSC-75, SOT-416
Power Dissipation (Max)1.2W (Ta)150mW (Ta)500mW (Ta)100mW (Ta)
Vgs(th) (Max) @ Id2V @ 1mA1.7V @ 100µA1V @ 1mA1.7V @ 100µA
Operating Temperature150°C-55°C ~ 150°C (TJ)150°C150°C
Supplier Device PackageSOT-23-3VESMUFMSSM
FET Feature----
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Base Product NumberSSM3J168SSM3J15-SSM3J15
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
Rds On (Max) @ Id, Vgs1.9Ohm @ 100mA, 4.5V12Ohm @ 10mA, 4V93mOhm @ 1.5A, 4.5V12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C400mA (Ta)100mA (Ta)3.2A (Ta)100mA (Ta)
Gate Charge (Qg) (Max) @ Vgs3 nC @ 10 V-4.7 nC @ 4.5 V-
SeriesU-MOSVIπ-MOSVIAutomotive, AEC-Q101, U-MOSVI-
Vgs (Max)+20V, -16V±20V+6V, -8V±20V

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