SQM40014EM_GE3

MOSFET N-CH 40V 200A TO263-7

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Specifications
Part Number:SQM40014EM_GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 40V 200A TO263-7
RoHs Status:
Nkesp Part Number:73D-SQM40014EM_GE3
Part Status10994 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263-7
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:1mOhm @ 35A, 10V
Power Dissipation (Max):375W (Tc)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:15525 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Base Product Number:SQM40014
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In stock: 10994 pcs

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Data sheet

Product Comparison

Part Number SQM40014EM_GE3
SQM40014EM_GE3
SQM40010EL_GE3
SQM40010EL_GE3
SQM40041EL_GE3
SQM40041EL_GE3
SQM120P10_10M1LGE3
SQM120P10_10M1LGE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds15525 pF @ 25 V17100 pF @ 20 V23600 pF @ 25 V9000 pF @ 25 V
Supplier Device PackageTO-263-7TO-263 (D²Pak)TO-263 (D²Pak)TO-263 (D²Pak)
Vgs (Max)±20V±20V±20V±20V
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V230 nC @ 10 V450 nC @ 10 V190 nC @ 10 V
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Power Dissipation (Max)375W (Tc)375W (Tc)157W (Tc)375W (Tc)
Base Product NumberSQM40014SQM40010SQM40041SQM120
Vgs(th) (Max) @ Id3.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V4.5V, 10V4.5V, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C200A (Tc)120A (Tc)120A (Tc)120A (Tc)
FET Feature----
FET TypeN-ChannelN-ChannelP-ChannelP-Channel
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Rds On (Max) @ Id, Vgs1mOhm @ 35A, 10V1.6mOhm @ 30A, 10V3.4mOhm @ 25A, 10V10.1mOhm @ 30A, 10V
SeriesAutomotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)40 V40 V40 V100 V

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