SQJ992EP-T2_GE3

DUAL N-CHANNEL 60-V (D-S) 175C M

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RFQ
Specifications
Part Number:SQJ992EP-T2_GE3
Manufacturer:Vishay / Siliconix
Description:DUAL N-CHANNEL 60-V (D-S) 175C M
Nkesp Part Number:73D-SQJ992EP-T2_GE3
Part Status42829 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8 Dual
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:56.2mOhm @ 3.7A, 10V
Power - Max:34W (Tc)
Package / Case:PowerPAK® SO-8 Dual
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:446pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
FET Feature:-
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Configuration:2 N-Channel (Dual)
Base Product Number:SQJ992
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In stock: 42829 pcs

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Data sheet

Product Comparison

Part Number SQJ992EP-T2_GE3
SQJ992EP-T2_GE3
SQJ992EP-T1_BE3
SQJ992EP-T1_BE3
SQJ990EP-T1_GE3
SQJ990EP-T1_GE3
SQJ968EP-T1_GE3
SQJ968EP-T1_GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®
Current - Continuous Drain (Id) @ 25°C15A (Tc)15A (Tc)34A (Tc)23.5A (Tc)
Rds On (Max) @ Id, Vgs56.2mOhm @ 3.7A, 10V56.2mOhm @ 3.7A, 10V40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V33.6mOhm @ 4.8A, 10V
Drain to Source Voltage (Vdss)60V60V100V60V
Supplier Device PackagePowerPAK® SO-8 DualPowerPAK® SO-8 DualPowerPAK® SO-8 Dual AsymmetricPowerPAK® SO-8 Dual
Input Capacitance (Ciss) (Max) @ Vds446pF @ 30V446pF @ 30V1390pF @ 25V, 650pF @ 25V714pF @ 30V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TA)
Configuration2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V12nC @ 10V30nC @ 10V, 15nC @ 10V18.5nC @ 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Package / CasePowerPAK® SO-8 DualPowerPAK® SO-8 DualPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
Base Product NumberSQJ992SQJ992SQJ990SQJ968
FET Feature----
Power - Max34W (Tc)34W (Tc)48W42W (Tc)

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