SQJ488EP-T1_GE3

MOSFET N-CH 100V 42A PPAK SO-8

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RFQ
Specifications
Part Number:SQJ488EP-T1_GE3
Manufacturer:Vishay Siliconix
Description:MOSFET N-CH 100V 42A PPAK SO-8
RoHs Status:
Nkesp Part Number:73D-SQJ488EP-T1_GE3
Part Status21189 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:21mOhm @ 7.4A, 10V
Power Dissipation (Max):83W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:979 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Base Product Number:SQJ488
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In stock: 21189 pcs

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Product Comparison

Part Number SQJ488EP-T1_GE3
SQJ488EP-T1_GE3
SQJ488EP-T2_BE3
SQJ488EP-T2_BE3
SQJ474EP-T2_GE3
SQJ474EP-T2_GE3
SQJ479EP-T1_GE3
SQJ479EP-T1_GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
FET TypeN-ChannelN-ChannelN-ChannelP-Channel
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds979 pF @ 25 V978 pF @ 50 V1100 pF @ 25 V4500 pF @ 25 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
FET Feature----
Power Dissipation (Max)83W (Tc)83W (Tc)45W (Tc)68W (Tc)
Rds On (Max) @ Id, Vgs21mOhm @ 7.4A, 10V21mOhm @ 7.1A, 10V30mOhm @ 10A, 10V33mOhm @ 10A, 10V
Drain to Source Voltage (Vdss)100 V100 V100 V80 V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
SeriesAutomotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V27 nC @ 10 V30 nC @ 10 V150 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C42A (Tc)42A (Tc)26A (Tc)32A (Tc)
Vgs (Max)±20V±20V±20V±20V
Base Product NumberSQJ488SQJ488SQJ474SQJ479
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V

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