SQJ481EP-T1_BE3

P-CHANNEL 80-V (D-S) 175C MOSFET

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Specifications
Part Number:SQJ481EP-T1_BE3
Manufacturer:Vishay Siliconix
Description:P-CHANNEL 80-V (D-S) 175C MOSFET
Nkesp Part Number:73D-SQJ481EP-T1_BE3
Part Status33146 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:80mOhm @ 10A, 10V
Power Dissipation (Max):45W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
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In stock: 33146 pcs

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Product Comparison

Part Number SQJ481EP-T1_BE3
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ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drain to Source Voltage (Vdss)80 V100 V75 V100 V
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V30 nC @ 10 V34 nC @ 10 V27 nC @ 10 V
SeriesAutomotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
FET Feature----
FET TypeP-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)45W (Tc)45W (Tc)56W (Tc)83W (Tc)
Vgs (Max)±20V±20V±20V±20V
Rds On (Max) @ Id, Vgs80mOhm @ 10A, 10V30mOhm @ 10A, 10V26mOhm @ 5.9A, 10V21mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C16A (Tc)26A (Tc)30A (Tc)42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 25 V1100 pF @ 25 V1386 pF @ 37 V978 pF @ 50 V

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