SQJ457EP-T1_BE3

P-CHANNEL 60-V (D-S) 175C MOSFET

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Specifications
Part Number:SQJ457EP-T1_BE3
Manufacturer:Vishay Siliconix
Description:P-CHANNEL 60-V (D-S) 175C MOSFET
Nkesp Part Number:73D-SQJ457EP-T1_BE3
Part Status38321 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:-
Rds On (Max) @ Id, Vgs:25mOhm @ 10A, 10V
Power Dissipation (Max):68W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
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In stock: 38321 pcs

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Product Comparison

Part Number SQJ457EP-T1_BE3
SQJ457EP-T1_BE3
SQJ444EP-T1_BE3
SQJ444EP-T1_BE3
SQJ443EP-T2_GE3
SQJ443EP-T2_GE3
SQJ454EP-T1_BE3
SQJ454EP-T1_BE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Drain to Source Voltage (Vdss)60 V40 V40 V200 V
Rds On (Max) @ Id, Vgs25mOhm @ 10A, 10V3.2mOhm @ 10A, 10V29mOhm @ 18A, 10V145mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V80 nC @ 10 V57 nC @ 10 V85 nC @ 10 V
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Power Dissipation (Max)68W (Tc)68W (Tc)83W (Tc)68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 25 V5000 pF @ 25 V2030 pF @ 20 V2600 pF @ 25 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C36A (Tc)60A (Tc)40A (Tc)13A (Tc)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Series--Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®
Vgs (Max)±20V±20V±20V±20V
FET Feature----
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
FET TypeP-ChannelN-ChannelP-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8

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