SQJ444EP-T1_BE3

N-CHANNEL 40-V (D-S) 175C MOSFET

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RFQ
Specifications
Part Number:SQJ444EP-T1_BE3
Manufacturer:Vishay / Siliconix
Description:N-CHANNEL 40-V (D-S) 175C MOSFET
Nkesp Part Number:73D-SQJ444EP-T1_BE3
Part Status28506 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:-
Rds On (Max) @ Id, Vgs:3.2mOhm @ 10A, 10V
Power Dissipation (Max):68W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
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In stock: 28506 pcs

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Data sheet

Product Comparison

Part Number SQJ444EP-T1_BE3
SQJ444EP-T1_BE3
SQJ433EP-T1_GE3
SQJ433EP-T1_GE3
SQJ454EP-T1_GE3
SQJ454EP-T1_GE3
SQJ423EP-T1_GE3
SQJ423EP-T1_GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
FET TypeN-ChannelP-ChannelN-ChannelP-Channel
FET Feature----
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C60A (Tc)75A (Tc)13A (Tc)55A (Tc)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Drain to Source Voltage (Vdss)40 V30 V200 V40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Vgs (Max)±20V±20V±20V±20V
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
Power Dissipation (Max)68W (Tc)83W (Tc)68W (Tc)68W (Tc)
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V108 nC @ 10 V85 nC @ 10 V130 nC @ 10 V
Series-Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs3.2mOhm @ 10A, 10V8.1mOhm @ 16A, 10V145mOhm @ 7.5A, 10V14mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds5000 pF @ 25 V4877 pF @ 15 V2600 pF @ 25 V4500 pF @ 25 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount

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