SQJ142EP-T1_GE3

MOSFET N-CH 40V 167A PPAK SO-8

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RFQ
Specifications
Part Number:SQJ142EP-T1_GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 40V 167A PPAK SO-8
RoHs Status:
Nkesp Part Number:73D-SQJ142EP-T1_GE3
Part Status31604 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:Automotive, AEC-Q101, TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:3.6mOhm @ 15A, 10V
Power Dissipation (Max):191W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:167A (Tc)
Base Product Number:SQJ142
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In stock: 31604 pcs

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Data sheet

Product Comparison

Part Number SQJ142EP-T1_GE3
SQJ142EP-T1_GE3
SQJ154EP-T1_GE3
SQJ154EP-T1_GE3
SQJ152ELP-T1_GE3
SQJ152ELP-T1_GE3
SQJ146EP-T1_GE3
SQJ146EP-T1_GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Current - Continuous Drain (Id) @ 25°C167A (Tc)243A (Tc)123A (Tc)75A (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds2650 pF @ 25 V3620 pF @ 25 V1633 pF @ 25 V1500 pF @ 25 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs(th) (Max) @ Id3.5V @ 250µA3.5V @ 250µA2.2V @ 250µA3.5V @ 250µA
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Rds On (Max) @ Id, Vgs3.6mOhm @ 15A, 10V2.5mOhm @ 15A, 10V5mOhm @ 15A, 10V7mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On)10V10V4.5V, 10V10V
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V65 nC @ 10 V34 nC @ 10 V27 nC @ 10 V
Base Product NumberSQJ142SQJ154SQJ152SQJ146
Drain to Source Voltage (Vdss)40 V40 V40 V40 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Power Dissipation (Max)191W (Tc)214W (Tc)136W (Tc)75W (Tc)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
SeriesAutomotive, AEC-Q101, TrenchFET® Gen IVAutomotive, AEC-Q101, TrenchFET® Gen IVAutomotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET® Gen IV
Vgs (Max)±20V±20V±20V±20V
FET Feature----

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