SQ7414CENW-T1_GE3

MOSFET N-CH 60V 18A PPAK1212-8W

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Specifications
Part Number:SQ7414CENW-T1_GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 60V 18A PPAK1212-8W
RoHs Status:
Nkesp Part Number:73D-SQ7414CENW-T1_GE3
Part Status42963 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8W
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:23mOhm @ 8.7A, 10V
Power Dissipation (Max):62W (Tc)
Package / Case:PowerPAK® 1212-8W
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Base Product Number:SQ7414
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In stock: 42963 pcs

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Data sheet

Product Comparison

Part Number SQ7414CENW-T1_GE3
SQ7414CENW-T1_GE3
IRLR3715TRPBF
IRLR3715TRPBF
FDD6688S
FDD6688S
SQ7415CENW-T1_GE3
SQ7415CENW-T1_GE3
ManufacturerVishay SiliconixInfineon TechnologiesonsemiVishay Siliconix
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
SeriesAutomotive, AEC-Q101, TrenchFET®HEXFET®PowerTrench®Automotive, AEC-Q101, TrenchFET®
FET TypeN-ChannelN-ChannelN-ChannelP-Channel
Rds On (Max) @ Id, Vgs23mOhm @ 8.7A, 10V14mOhm @ 26A, 10V5.1mOhm @ 18.5A, 10V65mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C18A (Tc)54A (Tc)88A (Ta)16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds1590 pF @ 30 V1060 pF @ 10 V3290 pF @ 15 V1385 pF @ 25 V
Base Product NumberSQ7414-FDD668-
Drain to Source Voltage (Vdss)60 V20 V30 V60 V
Vgs(th) (Max) @ Id2.5V @ 250µA3V @ 250µA3V @ 1mA2.5V @ 250µA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Vgs (Max)±20V±20V±20V±20V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / CasePowerPAK® 1212-8WTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63PowerPAK® 1212-8W
Power Dissipation (Max)62W (Tc)3.8W (Ta), 71W (Tc)69W (Ta)53W (Tc)
Supplier Device PackagePowerPAK® 1212-8WD-PakTO-252AAPowerPAK® 1212-8W
FET Feature----
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V17 nC @ 4.5 V81 nC @ 10 V38 nC @ 10 V

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