SQ4435EY-T1_GE3

MOSFET P-CHANNEL 30V 15A 8SOIC

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Specifications
Part Number:SQ4435EY-T1_GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET P-CHANNEL 30V 15A 8SOIC
RoHs Status:
Nkesp Part Number:73D-SQ4435EY-T1_GE3
Part Status24928 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:-
Rds On (Max) @ Id, Vgs:18mOhm @ 8A, 10V
Power Dissipation (Max):6.8W (Tc)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Base Product Number:SQ4435
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In stock: 24928 pcs

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Product Comparison

Part Number SQ4435EY-T1_GE3
SQ4435EY-T1_GE3
SQ4401EY-T1_BE3
SQ4401EY-T1_BE3
SQ4483EY-T1_GE3
SQ4483EY-T1_GE3
SQ4431EY-T1_BE3
SQ4431EY-T1_BE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Rds On (Max) @ Id, Vgs18mOhm @ 8A, 10V14mOhm @ 10.5A, 10V8.5mOhm @ 10A, 10V30mOhm @ 6A, 10V
Vgs (Max)±20V±20V±20V±20V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Base Product NumberSQ4435SQ4401SQ4483SQ4431
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Series-Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V115 nC @ 10 V113 nC @ 10 V25 nC @ 10 V
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
Power Dissipation (Max)6.8W (Tc)7.14W (Tc)7W (Tc)6W (Tc)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Supplier Device Package8-SOIC8-SOIC8-SOIC8-SOIC
Input Capacitance (Ciss) (Max) @ Vds2170 pF @ 15 V4250 pF @ 20 V4500 pF @ 15 V1265 pF @ 15 V
FET Feature----
Drain to Source Voltage (Vdss)30 V40 V30 V30 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)17.3A (Tc)30A (Tc)10.8A (Tc)

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