SPI21N50C3HKSA1

MOSFET N-CH 500V 21A TO262-3

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Specifications
Part Number:SPI21N50C3HKSA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 500V 21A TO262-3
Nkesp Part Number:73D-SPI21N50C3HKSA1
Part Status3279 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.9V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO262-3-1
Series:CoolMOS™
Rds On (Max) @ Id, Vgs:190mOhm @ 13.1A, 10V
Power Dissipation (Max):208W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Base Product Number:SPI21N
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In stock: 3279 pcs

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Data sheet

Product Comparison

Part Number SPI21N50C3HKSA1
SPI21N50C3HKSA1
SPI21N50C3XKSA1
SPI21N50C3XKSA1
SPI16N50C3IN
SPI16N50C3IN
SPI35N10
SPI35N10
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
SeriesCoolMOS™CoolMOS™*SIPMOS®
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--55°C ~ 175°C (TJ)
FET Feature----
Base Product NumberSPI21NSPI21N50-SPI35N
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AA-TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 25 V2400 pF @ 25 V-1570 pF @ 25 V
Drain to Source Voltage (Vdss)500 V560 V-100 V
PackageTubeTubeBulkTube
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V95 nC @ 10 V-65 nC @ 10 V
FET TypeN-ChannelN-Channel-N-Channel
Supplier Device PackagePG-TO262-3-1PG-TO262-3-1-PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On)10V10V-10V
Mounting TypeThrough HoleThrough Hole-Through Hole
Rds On (Max) @ Id, Vgs190mOhm @ 13.1A, 10V190mOhm @ 13.1A, 10V-44mOhm @ 26.4A, 10V
Current - Continuous Drain (Id) @ 25°C21A (Tc)21A (Tc)-35A (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)-MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.9V @ 1mA3.9V @ 1mA-4V @ 83µA
Power Dissipation (Max)208W (Tc)208W (Tc)-150W (Tc)
Vgs (Max)±20V±20V-±20V

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