SPB21N50C3ATMA1

MOSFET N-CH 560V 21A TO263-3

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Specifications
Part Number:SPB21N50C3ATMA1
Manufacturer:Infineon Technologies
Description:MOSFET N-CH 560V 21A TO263-3
RoHs Status:
Nkesp Part Number:73D-SPB21N50C3ATMA1
Part Status8749 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:3.9V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-3-2
Series:CoolMOS™
Rds On (Max) @ Id, Vgs:190mOhm @ 13.1A, 10V
Power Dissipation (Max):208W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):560 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Base Product Number:SPB21N50
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In stock: 8749 pcs

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Product Comparison

Part Number SPB21N50C3ATMA1
SPB21N50C3ATMA1
SPB35N10 G
SPB35N10 G
SPB16N50C3ATMA1
SPB16N50C3ATMA1
SPB18P06PG
SPB18P06PG
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)-
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB-
Vgs(th) (Max) @ Id3.9V @ 1mA4V @ 83µA3.9V @ 675µA-
Base Product NumberSPB21N50SPB35NSPB16N-
Rds On (Max) @ Id, Vgs190mOhm @ 13.1A, 10V44mOhm @ 26.4A, 10V280mOhm @ 10A, 10V-
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V65 nC @ 10 V66 nC @ 10 V-
Drain to Source Voltage (Vdss)560 V100 V560 V-
Supplier Device PackagePG-TO263-3-2PG-TO263-3-2PG-TO263-3-2-
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)-
Vgs (Max)±20V±20V±20V-
FET TypeN-ChannelN-ChannelN-Channel-
Power Dissipation (Max)208W (Tc)150W (Tc)160W (Tc)-
Mounting TypeSurface MountSurface MountSurface Mount-
FET Feature----
Current - Continuous Drain (Id) @ 25°C21A (Tc)35A (Tc)16A (Tc)-
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 25 V1570 pF @ 25 V1600 pF @ 25 V-
SeriesCoolMOS™SIPMOS®CoolMOS™-
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-
Drive Voltage (Max Rds On, Min Rds On)10V10V10V-

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