SP8J66TB1

MOSFET 2P-CH 30V 9A 8SOIC

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Specifications
Part Number:SP8J66TB1
Manufacturer:LAPIS Technology
Description:MOSFET 2P-CH 30V 9A 8SOIC
RoHs Status:
Nkesp Part Number:73D-SP8J66TB1
Part Status4245 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:-
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP
Series:-
Rds On (Max) @ Id, Vgs:-
Power - Max:-
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:-
FET Feature:-
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:9A
Configuration:2 P-Channel (Dual)
Base Product Number:SP8J66
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In stock: 4245 pcs

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Data sheet

Product Comparison

Part Number SP8J66TB1
SP8J66TB1
SP8K1FRATB
SP8K1FRATB
SP8J65TB1
SP8J65TB1
SP8K24HZGTB
SP8K24HZGTB
ManufacturerRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm Semiconductor
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
FET Feature--Logic Level Gate-
Current - Continuous Drain (Id) @ 25°C9A5A (Ta)7A6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds-230pF @ 10V1200pF @ 10V1400pF @ 10V
Rds On (Max) @ Id, Vgs-51mOhm @ 5A, 10V29mOhm @ 7A, 10V25mOhm @ 6A, 10V
Operating Temperature-150°C (TJ)150°C (TJ)150°C (TJ)
Vgs(th) (Max) @ Id-2.5V @ 1mA2.5V @ 1mA2.5V @ 1mA
Drain to Source Voltage (Vdss)30V30V30V45V
Configuration2 P-Channel (Dual)2 N-Channel (Dual)2 P-Channel (Dual)2 N-Channel (Dual)
Supplier Device Package8-SOP8-SOP8-SOP8-SOP
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Gate Charge (Qg) (Max) @ Vgs-5.5nC @ 5V18nC @ 5V21.6nC @ 5V
Power - Max-1.4W (Ta)2W2W (Ta)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Base Product NumberSP8J66SP8K1SP8J65SP8K24
Series-Automotive, AEC-Q101--

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