SP000089223

P-CHANNEL POWER MOSFET

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RFQ
Specifications
Part Number:SP000089223
Manufacturer:Infineon Technologies
Description:P-CHANNEL POWER MOSFET
Nkesp Part Number:73D-SP000089223
Part Status69517 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:2V @ 130µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-SOT223-4-21
Series:SIPMOS®
Rds On (Max) @ Id, Vgs:12Ohm @ 260mA, 10V
Power Dissipation (Max):1.8W (Ta)
Package / Case:TO-261-4, TO-261AA
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:5.4 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:260mA (Ta)

In stock: 69517 pcs

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Product Comparison

Part Number SP000089223
SP000089223
NTTFS5C670NLTWG
NTTFS5C670NLTWG
SP000629364
SP000629364
IRF2804STRL
IRF2804STRL
ManufacturerInfineon TechnologiesonsemiInfineon TechnologiesInfineon Technologies
Drive Voltage (Max Rds On, Min Rds On)2.8V, 10V4.5V, 10V10V10V
Rds On (Max) @ Id, Vgs12Ohm @ 260mA, 10V6.5mOhm @ 35A, 10V950mOhm @ 1.5A, 10V2mOhm @ 75A, 10V
Power Dissipation (Max)1.8W (Ta)3.2W (Ta), 63W (Tc)37W (Tc)330W (Tc)
Vgs(th) (Max) @ Id2V @ 130µA2V @ 250µA3.5V @ 130µA4V @ 250µA
Mounting TypeSurface MountSurface MountThrough HoleSurface Mount
FET TypeP-ChannelN-ChannelN-ChannelN-Channel
Supplier Device PackagePG-SOT223-4-218-WDFN (3.3x3.3)PG-TO220-3-1D2PAK
Drain to Source Voltage (Vdss)250 V60 V600 V40 V
Package / CaseTO-261-4, TO-261AA8-PowerWDFNTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PackageBulkTape & Reel (TR)TubeTape & Reel (TR)
SeriesSIPMOS®-CoolMOS™HEXFET®
FET Feature----
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs5.4 nC @ 10 V20 nC @ 10 V13 nC @ 10 V240 nC @ 10 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C260mA (Ta)16A (Ta), 70A (Tc)4.4A (Tc)75A (Tc)
Input Capacitance (Ciss) (Max) @ Vds104 pF @ 25 V1400 pF @ 25 V280 pF @ 100 V6450 pF @ 25 V
Vgs (Max)±20V±20V±20V±20V

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