SISS5808DN-T1-GE3

N-CHANNEL 80 V (D-S) MOSFET POWE

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Specifications
Part Number:SISS5808DN-T1-GE3
Manufacturer:Vishay Siliconix
Description:N-CHANNEL 80 V (D-S) MOSFET POWE
Nkesp Part Number:73D-SISS5808DN-T1-GE3
Part Status20756 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8S
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:119mOhm @ 3.5A, 10V
Power Dissipation (Max):5W (Ta), 65.7W (Tc)
Package / Case:PowerPAK® 1212-8S
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1210 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:18.3A (Ta), 66.6A (Tc)
Base Product Number:SISS5808
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In stock: 20756 pcs

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Product Comparison

Part Number SISS5808DN-T1-GE3
SISS5808DN-T1-GE3
SISS588DN-T1-GE3
SISS588DN-T1-GE3
SISS70DN-T1-GE3
SISS70DN-T1-GE3
SISS67DN-T1-GE3
SISS67DN-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs (Max)±20V±20V±20V±25V
Power Dissipation (Max)5W (Ta), 65.7W (Tc)4.8W (Ta), 56.8W (Tc)5.1W (Ta), 65.8W (Tc)65.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET Feature----
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V7.5V, 10V10V4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds1210 pF @ 40 V1380 pF @ 40 V535 pF @ 62.5 V4380 pF @ 15 V
FET TypeN-ChannelN-ChannelN-ChannelP-Channel
Base Product NumberSISS5808-SISS70SISS67
Current - Continuous Drain (Id) @ 25°C18.3A (Ta), 66.6A (Tc)16.9A (Ta), 58.1A (Tc)8.5A (Ta), 31A (Tc)60A (Tc)
Supplier Device PackagePowerPAK® 1212-8SPowerPAK® 1212-8SPowerPAK® 1212-8SPowerPAK® 1212-8S
SeriesTrenchFET®TrenchFET® Gen VTrenchFET®TrenchFET® Gen III
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V28.5 nC @ 10 V15.3 nC @ 10 V111 nC @ 10 V
Rds On (Max) @ Id, Vgs119mOhm @ 3.5A, 10V8mOhm @ 10A, 10V29.8mOhm @ 8.5A, 10V5.5mOhm @ 15A, 10V
Drain to Source Voltage (Vdss)80 V80 V125 V30 V
Package / CasePowerPAK® 1212-8SPowerPAK® 1212-8SPowerPAK® 1212-8SPowerPAK® 1212-8S
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4.5V @ 250µA2.5V @ 250µA

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