SIS590DN-T1-GE3

COMBO N- & P-CHANNEL 100 V (D-S)

Quantity
RFQ
Specifications
Part Number:SIS590DN-T1-GE3
Manufacturer:Vishay / Siliconix
Description:COMBO N- & P-CHANNEL 100 V (D-S)
RoHs Status:
Nkesp Part Number:73D-SIS590DN-T1-GE3
Part Status37564 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8 Dual
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Power - Max:2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Package / Case:PowerPAK® 1212-8 Dual
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:-
FET Feature:-
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Configuration:N and P-Channel
Base Product Number:SIS590
Download Details PDF:

In stock: 37564 pcs

Request Quote
Please click " QUICK RFQ " and provide your contact information,
or email us at [email protected].
We will respond promptly to your inquiry.
Vishay Siliconix
Quantity
QUICK RFQ

Data sheet

Product Comparison

Part Number SIS590DN-T1-GE3
SIS590DN-T1-GE3
SIS468DN-T1-GE3
SIS468DN-T1-GE3
SIS776DN-T1-GE3
SIS776DN-T1-GE3
SIS472DN-T1-GE3
SIS472DN-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Base Product NumberSIS590SIS468SIS776SIS472
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
SeriesTrenchFET®TrenchFET®SkyFET®, TrenchFET®TrenchFET®
ConfigurationN and P-Channel---
Gate Charge (Qg) (Max) @ Vgs-28 nC @ 10 V36 nC @ 10 V30 nC @ 10 V
Power - Max2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)---
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Package / CasePowerPAK® 1212-8 DualPowerPAK® 1212-8PowerPAK® 1212-8PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V19.5mOhm @ 10A, 10V6.2mOhm @ 10A, 10V8.9mOhm @ 15A, 10V
Drain to Source Voltage (Vdss)100V80 V30 V30 V
FET Feature--Schottky Diode (Body)-
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Supplier Device PackagePowerPAK® 1212-8 DualPowerPAK® 1212-8PowerPAK® 1212-8PowerPAK® 1212-8
Vgs(th) (Max) @ Id2.5V @ 250µA3V @ 250µA2.5V @ 250µA2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds-780 pF @ 40 V1360 pF @ 15 V997 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)30A (Tc)35A (Tc)20A (Tc)

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Certifications & Memberships

We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >

Hot Parts

0 RFQ
Shopping cart (0 Items)
It is empty.
Compare List (0 Items)
It is empty.
Feedback

Your feedback is very important! On this website, we value user experience and strive for continuous improvement.
Please share your feedback with us through our feedback form, and we will respond promptly.
Thank you for choosing us.

Subject
E-mail
Comments
Captcha
Drag or click to upload file
Upload File
types: .xls, .xlsx, .doc, .docx, .jpg, .png and .pdf.
Max file size: 10MB