In stock: 22558 pcs
| Part Number |
SIRA99DP-T1-GE3
 |
SIRA90DP-T1-RE3
 |
SIRA96DP-T1-GE3
|
SIRA80DP-T1-RE3
|
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V | |
| Base Product Number | SIRA99 | SIRA90 | SIRA96 | SIRA80 | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | |
| Vgs (Max) | +16V, -20V | +20V, -16V | +20V, -16V | +20V, -16V | |
| FET Feature | - | - | - | - | |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 20A, 10V | 0.8mOhm @ 20A, 10V | 8.8mOhm @ 10A, 10V | 0.62mOhm @ 20A, 10V | |
| Series | TrenchFET® Gen IV | - | TrenchFET® Gen IV | TrenchFET® Gen IV | |
| Input Capacitance (Ciss) (Max) @ Vds | 10955 pF @ 15 V | 10180 pF @ 15 V | 1385 pF @ 15 V | 9530 pF @ 15 V | |
| FET Type | P-Channel | N-Channel | N-Channel | N-Channel | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 2V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA | |
| Current - Continuous Drain (Id) @ 25°C | 47.9A (Ta), 195A (Tc) | 100A (Tc) | 16A (Tc) | 100A (Tc) | |
| Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | 153 nC @ 10 V | 15 nC @ 4.5 V | 188 nC @ 10 V | |
| Power Dissipation (Max) | 6.35W (Ta), 104W (Tc) | 104W (Tc) | 34.7W (Tc) | 104W (Tc) |
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