SIR870BDP-T1-RE3

MOSFET N-CH 100V 18.8A/81A PPAK

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Specifications
Part Number:SIR870BDP-T1-RE3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 100V 18.8A/81A PPAK
RoHs Status:
Nkesp Part Number:73D-SIR870BDP-T1-RE3
Part Status24768 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:6.1mOhm @ 15A, 10V
Power Dissipation (Max):5.4W (Ta), 100W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:4870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18.8A (Ta), 81A (Tc)
Base Product Number:SIR870
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In stock: 24768 pcs

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Product Comparison

Part Number SIR870BDP-T1-RE3
SIR870BDP-T1-RE3
SIR870ADP-T1-RE3
SIR870ADP-T1-RE3
SIR876DP-T1-GE3
SIR876DP-T1-GE3
SIR864DP-T1-GE3
SIR864DP-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Power Dissipation (Max)5.4W (Ta), 100W (Tc)104W (Tc)5W (Ta), 62.5W (Tc)5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA2.8V @ 250µA2.4V @ 250µA
Rds On (Max) @ Id, Vgs6.1mOhm @ 15A, 10V6.6mOhm @ 20A, 10V10.8mOhm @ 20A, 10V3.6mOhm @ 15A, 10V
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Base Product NumberSIR870SIR870SIR876SIR864
Current - Continuous Drain (Id) @ 25°C18.8A (Ta), 81A (Tc)60A (Tc)40A (Tc)40A (Tc)
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Input Capacitance (Ciss) (Max) @ Vds4870 pF @ 50 V2866 pF @ 50 V1640 pF @ 50 V2460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V80 nC @ 10 V48 nC @ 10 V65 nC @ 10 V
Vgs (Max)±20V±20V±20V±20V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
Drain to Source Voltage (Vdss)100 V100 V100 V30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)

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