SIR844DP-T1-GE3

MOSFET N-CH 25V 50A PPAK SO-8

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Specifications
Part Number:SIR844DP-T1-GE3
Manufacturer:Vishay Siliconix
Description:MOSFET N-CH 25V 50A PPAK SO-8
RoHs Status:
Nkesp Part Number:73D-SIR844DP-T1-GE3
Part Status4609 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:2.6V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:2.8mOhm @ 15A, 10V
Power Dissipation (Max):5W (Ta), 50W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:3215 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Base Product Number:SIR844
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In stock: 4609 pcs

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Product Comparison

Part Number SIR844DP-T1-GE3
SIR844DP-T1-GE3
SIR838DP-T1-GE3
SIR838DP-T1-GE3
SIR870ADP-T1-GE3
SIR870ADP-T1-GE3
SIR826ADP-T1-GE3
SIR826ADP-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Base Product NumberSIR844SIR838SIR870SIR826
Drain to Source Voltage (Vdss)25 V150 V100 V80 V
Power Dissipation (Max)5W (Ta), 50W (Tc)5.4W (Ta), 96W (Tc)6.25W (Ta), 104W (Tc)6.25W (Ta), 104W (Tc)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
FET Feature----
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Rds On (Max) @ Id, Vgs2.8mOhm @ 15A, 10V33mOhm @ 8.3A, 10V6.6mOhm @ 20A, 10V5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C50A (Tc)35A (Tc)60A (Tc)60A (Tc)
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V50 nC @ 10 V80 nC @ 10 V86 nC @ 10 V
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
Vgs (Max)±20V±20V±20V±20V
Vgs(th) (Max) @ Id2.6V @ 250µA4V @ 250µA3V @ 250µA2.8V @ 250µA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Input Capacitance (Ciss) (Max) @ Vds3215 pF @ 10 V2075 pF @ 75 V2866 pF @ 50 V2800 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V10V4.5V, 10V4.5V, 10V

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