SIR688DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

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Specifications
Part Number:SIR688DP-T1-GE3
Manufacturer:Vishay Siliconix
Description:MOSFET N-CH 60V 60A PPAK SO-8
RoHs Status:
Nkesp Part Number:73D-SIR688DP-T1-GE3
Part Status17328 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:2.7V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:3.5mOhm @ 20A, 10V
Power Dissipation (Max):5.4W (Ta), 83W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:3105 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Base Product Number:SIR688

In stock: 17328 pcs

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Product Comparison

Part Number SIR688DP-T1-GE3
SIR688DP-T1-GE3
SIR681DP-T1-RE3
SIR681DP-T1-RE3
SIR696DP-T1-GE3
SIR696DP-T1-GE3
SIR646DP-T1-GE3
SIR646DP-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds3105 pF @ 30 V4850 pF @ 40 V1410 pF @ 75 V2230 pF @ 20 V
Vgs(th) (Max) @ Id2.7V @ 250µA2.6V @ 250µA4.5V @ 250µA2.2V @ 250µA
FET TypeN-ChannelP-ChannelN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V105 nC @ 10 V38 nC @ 10 V51 nC @ 10 V
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 10V11.2mOhm @ 10A, 10V11.5mOhm @ 20A, 10V3.8mOhm @ 20A, 10V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Power Dissipation (Max)5.4W (Ta), 83W (Tc)6.25W (Ta), 104W (Tc)104W (Tc)5W (Ta), 54W (Tc)
Base Product NumberSIR688SIR681SIR696SIR646
Drain to Source Voltage (Vdss)60 V80 V125 V40 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET Feature----
SeriesTrenchFET®TrenchFET® Gen IVThunderFET®TrenchFET®
Current - Continuous Drain (Id) @ 25°C60A (Tc)17.6A (Ta), 71.9A (Tc)60A (Tc)60A (Tc)
Vgs (Max)±20V±20V±20V±20V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V-7.5V, 10V4.5V, 10V
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8

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