SIR622DP-T1-GE3

MOSFET N-CH 150V 51.6A PPAK SO-8

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Specifications
Part Number:SIR622DP-T1-GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 150V 51.6A PPAK SO-8
RoHs Status:
Nkesp Part Number:73D-SIR622DP-T1-GE3
Part Status20086 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:ThunderFET®
Rds On (Max) @ Id, Vgs:17.7mOhm @ 20A, 10V
Power Dissipation (Max):104W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1516 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 7.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:51.6A (Tc)
Base Product Number:SIR622
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In stock: 20086 pcs

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Data sheet

Product Comparison

Part Number SIR622DP-T1-GE3
SIR622DP-T1-GE3
SIR624DP-T1-RE3
SIR624DP-T1-RE3
SIR584DP-T1-RE3
SIR584DP-T1-RE3
SIR638ADP-T1-RE3
SIR638ADP-T1-RE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
FET Feature----
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Drain to Source Voltage (Vdss)150 V200 V80 V40 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)104W (Tc)5W (Ta), 52W (Tc)5W (Ta), 83.3W (Tc)104W (Tc)
Gate Charge (Qg) (Max) @ Vgs31 nC @ 7.5 V30 nC @ 10 V56 nC @ 10 V165 nC @ 10 V
Vgs(th) (Max) @ Id4.5V @ 250µA4V @ 250µA4V @ 250µA2.3V @ 250µA
Vgs (Max)±20V±20V±20V+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V7.5V, 10V7.5V, 10V4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds1516 pF @ 75 V1110 pF @ 100 V2800 pF @ 40 V9100 pF @ 100 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
SeriesThunderFET®ThunderFET®TrenchFET® Gen VTrenchFET® Gen IV
Base Product NumberSIR622SIR624-SIR638
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C51.6A (Tc)5.7A (Ta), 18.6A (Tc)24.7A (Ta), 100A (Tc)100A (Tc)
Rds On (Max) @ Id, Vgs17.7mOhm @ 20A, 10V60mOhm @ 10A, 10V3.9mOhm @ 15A, 10V0.88mOhm @ 20A, 10V
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8

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