SIR482DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

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RFQ
Specifications
Part Number:SIR482DP-T1-GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 30V 35A PPAK SO-8
RoHs Status:
Nkesp Part Number:73D-SIR482DP-T1-GE3
Part Status4091 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:2.3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:5.6mOhm @ 20A, 10V
Power Dissipation (Max):5W (Ta), 27.7W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1575 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Base Product Number:SIR482
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In stock: 4091 pcs

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Data sheet

Product Comparison

Part Number SIR482DP-T1-GE3
SIR482DP-T1-GE3
SIR468DP-T1-GE3
SIR468DP-T1-GE3
SIR496DP-T1-GE3
SIR496DP-T1-GE3
SIR472ADP-T1-GE3
SIR472ADP-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V44 nC @ 10 V42 nC @ 10 V28 nC @ 10 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds1575 pF @ 15 V1720 pF @ 15 V1570 pF @ 10 V1040 pF @ 15 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs(th) (Max) @ Id2.3V @ 250µA3V @ 250µA2.5V @ 250µA2.3V @ 250µA
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Vgs (Max)±20V±20V±20V±20V
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Rds On (Max) @ Id, Vgs5.6mOhm @ 20A, 10V5.7mOhm @ 20A, 10V4.5mOhm @ 20A, 10V9mOhm @ 15A, 10V
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
Base Product NumberSIR482SIR468SIR496SIR472
Current - Continuous Drain (Id) @ 25°C35A (Tc)40A (Tc)35A (Tc)18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Power Dissipation (Max)5W (Ta), 27.7W (Tc)5W (Ta), 50W (Tc)5W (Ta), 27.7W (Tc)3.3W (Ta), 14.7W (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V30 V20 V30 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
FET Feature----

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