SIR4608DP-T1-GE3

N-CHANNEL 60 V (D-S) MOSFET POWE

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RFQ
Specifications
Part Number:SIR4608DP-T1-GE3
Manufacturer:Vishay / Siliconix
Description:N-CHANNEL 60 V (D-S) MOSFET POWE
RoHs Status:
Nkesp Part Number:73D-SIR4608DP-T1-GE3
Part Status28820 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:11.8mOhm @ 10A, 10V
Power Dissipation (Max):3.6W (Ta), 39W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:13.1A (Ta), 42.8A (Tc)
Base Product Number:SIR4608
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In stock: 28820 pcs

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Data sheet

Product Comparison

Part Number SIR4608DP-T1-GE3
SIR4608DP-T1-GE3
SIR462DP-T1-GE3
SIR462DP-T1-GE3
SIR4604DP-T1-GE3
SIR4604DP-T1-GE3
SIR466DP-T1-GE3
SIR466DP-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V30 nC @ 10 V22 nC @ 10 V65 nC @ 10 V
Vgs(th) (Max) @ Id4V @ 250µA3V @ 250µA4V @ 250µA2.4V @ 250µA
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V4.5V, 10V7.5V, 10V4.5V, 10V
Base Product NumberSIR4608SIR462SIR4604SIR466
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesTrenchFET® Gen IVTrenchFET®TrenchFET® Gen IVTrenchFET®
Rds On (Max) @ Id, Vgs11.8mOhm @ 10A, 10V7.9mOhm @ 20A, 10V9.5mOhm @ 10A, 10V3.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C13.1A (Ta), 42.8A (Tc)30A (Tc)15.1A (Ta), 49.3A (Tc)40A (Tc)
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 30 V1155 pF @ 15 V960 pF @ 30 V2730 pF @ 15 V
Power Dissipation (Max)3.6W (Ta), 39W (Tc)4.8W (Ta), 41.7W (Tc)3.9W (Ta), 41.6W (Tc)5W (Ta), 54W (Tc)
Vgs (Max)±20V±20V±20V±20V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V30 V60 V30 V

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