In stock: 25288 pcs
| Part Number |
SIJH440E-T1-GE3
|
SIJ494DP-T1-GE3
 |
SIJH5800E-T1-GE3
|
SIJH112E-T1-GE3
|
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Package / Case | PowerPAK® 8 x 8 | PowerPAK® SO-8 | PowerPAK® 8 x 8 | 8-PowerTDFN | |
| Series | TrenchFET® Gen IV | ThunderFET® | TrenchFET® | - | |
| FET Feature | - | - | - | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 20330 pF @ 20 V | 1070 pF @ 75 V | 7730 pF @ 40 V | 8050 pF @ 50 V | |
| Base Product Number | SIJH440 | SIJ494 | - | SIJH112 | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 7.5V, 10V | 7.5V, 10V | - | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | |
| Supplier Device Package | PowerPAK® 8 x 8 | PowerPAK® SO-8 | PowerPAK® 8 x 8 | PowerPAK® 8 x 8 | |
| Power Dissipation (Max) | 158W (Tc) | 69.4W (Tc) | 3.3W (Ta), 333W (Tc) | 3.3W (Ta), 333W (Tc) | |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 4.5 V | 31 nC @ 10 V | 155 nC @ 10 V | 160 nC @ 10 V | |
| Rds On (Max) @ Id, Vgs | 0.96mOhm @ 20A, 10V | 23.2mOhm @ 15A, 10V | 1.35mOhm @ 20A, 10V | 2.8mOhm @ 20A, 10V | |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | |
| Drain to Source Voltage (Vdss) | 40 V | 150 V | 80 V | 100 V | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA | 4.5V @ 250µA | 4V @ 250µA | 4V @ 250µA | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) | 36.8A (Tc) | 30A (Ta), 302A (Tc) | 23A (Ta), 225A (Tc) | |
| Vgs (Max) | +20V, -16V | ±20V | ±20V | ±20V |
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