SIJ128LDP-T1-GE3

MOSFET N-CH 80V 10.2A/25.5A PPAK

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Part Number:SIJ128LDP-T1-GE3
Manufacturer:Vishay Siliconix
Description:MOSFET N-CH 80V 10.2A/25.5A PPAK
RoHs Status:
Nkesp Part Number:73D-SIJ128LDP-T1-GE3
Part Status22817 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:15.6mOhm @ 10A, 10V
Power Dissipation (Max):3.6W (Ta), 22.3W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1250 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:10.2A (Ta), 25.5A (Tc)
Base Product Number:SIJ128
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In stock: 22817 pcs

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Product Comparison

Part Number SIJ128LDP-T1-GE3
SIJ128LDP-T1-GE3
SIJ462ADP-T1-GE3
SIJ462ADP-T1-GE3
SIJ188DP-T1-GE3
SIJ188DP-T1-GE3
SIJ484DP-T1-GE3
SIJ484DP-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Current - Continuous Drain (Id) @ 25°C10.2A (Ta), 25.5A (Tc)15.8A (Ta), 39.3A (Tc)25.5A (Ta), 92.4A (Tc)35A (Tc)
Rds On (Max) @ Id, Vgs15.6mOhm @ 10A, 10V7.2mOhm @ 10A, 10V3.85mOhm @ 10A, 10V6.3mOhm @ 10A, 10V
Base Product NumberSIJ128SIJ462SIJ188SIJ484
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V7.5V, 10V4.5V, 10V
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
FET Feature----
Power Dissipation (Max)3.6W (Ta), 22.3W (Tc)3.6W (Ta), 22.3W (Tc)5W (Ta), 65.7W (Tc)5W (Ta), 27.7W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesTrenchFET®TrenchFET®TrenchFET® Gen IVTrenchFET®
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)80 V60 V60 V30 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA3.6V @ 250µA2.5V @ 250µA
Supplier Device PackagePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 40 V1235 pF @ 30 V1920 pF @ 30 V1600 pF @ 15 V
Vgs (Max)±20V±20V±20V±20V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V30 nC @ 10 V44 nC @ 10 V45 nC @ 10 V

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