SIHH24N65E-T1-GE3

MOSFET N-CH 650V 23A PPAK 8 X 8

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Specifications
Part Number:SIHH24N65E-T1-GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 650V 23A PPAK 8 X 8
RoHs Status:
Nkesp Part Number:73D-SIHH24N65E-T1-GE3
Part Status5649 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 8 x 8
Series:-
Rds On (Max) @ Id, Vgs:150mOhm @ 12A, 10V
Power Dissipation (Max):202W (Tc)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Base Product Number:SIHH24
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In stock: 5649 pcs

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Data sheet

Product Comparison

Part Number SIHH24N65E-T1-GE3
SIHH24N65E-T1-GE3
SIHH26N60EF-T1-GE3
SIHH26N60EF-T1-GE3
SIHH20N50E-T1-GE3
SIHH20N50E-T1-GE3
SIHH26N60E-T1-GE3
SIHH26N60E-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Tc)24A (Tc)22A (Tc)25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Input Capacitance (Ciss) (Max) @ Vds2814 pF @ 100 V2744 pF @ 100 V2063 pF @ 100 V2815 pF @ 100 V
FET Feature----
Supplier Device PackagePowerPAK® 8 x 8PowerPAK® 8 x 8PowerPAK® 8 x 8PowerPAK® 8 x 8
Gate Charge (Qg) (Max) @ Vgs116 nC @ 10 V120 nC @ 10 V84 nC @ 10 V116 nC @ 10 V
Base Product NumberSIHH24SIHH26SIHH20SIHH26
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Series--E-
Vgs (Max)±30V±30V±30V±30V
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFN8-PowerTDFN
PackageTape & Reel (TR)Tape & Reel (TR)TubeTape & Reel (TR)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drain to Source Voltage (Vdss)650 V600 V500 V600 V
Rds On (Max) @ Id, Vgs150mOhm @ 12A, 10V141mOhm @ 13A, 10V147mOhm @ 10A, 10V135mOhm @ 13A, 10V
Power Dissipation (Max)202W (Tc)202W (Tc)174W (Tc)202W (Tc)

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