SIHH180N60E-T1-GE3

MOSFET N-CH 600V 19A PPAK 8 X 8

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Specifications
Part Number:SIHH180N60E-T1-GE3
Manufacturer:Vishay Siliconix
Description:MOSFET N-CH 600V 19A PPAK 8 X 8
RoHs Status:
Nkesp Part Number:73D-SIHH180N60E-T1-GE3
Part Status9732 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 8 x 8
Series:E
Rds On (Max) @ Id, Vgs:180mOhm @ 9.5A, 10V
Power Dissipation (Max):114W (Tc)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1085 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Base Product Number:SIHH180
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In stock: 9732 pcs

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Data sheet

Product Comparison

Part Number SIHH180N60E-T1-GE3
SIHH180N60E-T1-GE3
SIHH14N60EF-T1-GE3
SIHH14N60EF-T1-GE3
SIHH186N60EF-T1GE3
SIHH186N60EF-T1GE3
SIHH150N60E-T1-GE3
SIHH150N60E-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Supplier Device PackagePowerPAK® 8 x 8PowerPAK® 8 x 8PowerPAK® 8 x 8PowerPAK® 8 x 8
Current - Continuous Drain (Id) @ 25°C19A (Tc)15A (Tc)16A (Tc)19A (Tc)
Power Dissipation (Max)114W (Tc)147W (Tc)114W (Tc)156W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFN8-PowerTDFN
Vgs(th) (Max) @ Id5V @ 250µA4V @ 250µA5V @ 250µA5V @ 250µA
Vgs (Max)±30V±30V±30V±30V
FET Feature----
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Drain to Source Voltage (Vdss)600 V600 V600 V600 V
Base Product NumberSIHH180SIHH14SIHH186SIHH150
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V84 nC @ 10 V32 nC @ 10 V36 nC @ 10 V
SeriesE-EFE
Rds On (Max) @ Id, Vgs180mOhm @ 9.5A, 10V266mOhm @ 7A, 10V193mOhm @ 9.5A, 10V155mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds1085 pF @ 100 V1449 pF @ 100 V1081 pF @ 100 V1514 pF @ 100 V

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