In stock: 18212 pcs
Part Number |
SIHG20N50E-GE3
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SIHG186N60EF-GE3
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SIHG22N60E-GE3
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SIHG20N50C-E3
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Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | |
Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 100 V | 1081 pF @ 100 V | 1920 pF @ 100 V | 2942 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V | 32 nC @ 10 V | 86 nC @ 10 V | 76 nC @ 10 V | |
Series | - | EF | - | - | |
Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC | |
Package | Tube | Tube | Tube | Tube | |
FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | |
Rds On (Max) @ Id, Vgs | 184mOhm @ 10A, 10V | 193mOhm @ 9.5A, 10V | 180mOhm @ 11A, 10V | 270mOhm @ 10A, 10V | |
Power Dissipation (Max) | 179W (Tc) | 156W (Tc) | 227W (Tc) | 250W (Tc) | |
Vgs(th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | |
FET Feature | - | - | - | - | |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | |
Drain to Source Voltage (Vdss) | 500 V | 600 V | 600 V | 500 V | |
Base Product Number | SIHG20 | SIHG186 | SIHG22 | SIHG20 | |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 | |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | 8.4A (Tc) | 21A (Tc) | 20A (Tc) |
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