SIHFR1N60ATR-GE3

MOSFET N-CH 600V 1.4A DPAK

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Specifications
Part Number:SIHFR1N60ATR-GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 600V 1.4A DPAK
RoHs Status:
Nkesp Part Number:73D-SIHFR1N60ATR-GE3
Part Status49080 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252AA
Series:-
Rds On (Max) @ Id, Vgs:7Ohm @ 840mA, 10V
Power Dissipation (Max):36W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Base Product Number:SIHFR1
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In stock: 49080 pcs

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Data sheet

Product Comparison

Part Number SIHFR1N60ATR-GE3
SIHFR1N60ATR-GE3
SIHFR430ATRL-GE3
SIHFR430ATRL-GE3
SIHFR220TRL-GE3
SIHFR220TRL-GE3
SIHFR320-GE3
SIHFR320-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Power Dissipation (Max)36W (Tc)110W (Tc)2.5W (Ta), 42W (Tc)2.5W (Ta), 42W (Tc)
Supplier Device PackageTO-252AATO-252AATO-252AATO-252AA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Rds On (Max) @ Id, Vgs7Ohm @ 840mA, 10V1.7Ohm @ 3A, 10V800mOhm @ 2.9A, 10V1.8Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Vgs (Max)±30V±30V±20V±20V
Series----
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V24 nC @ 10 V14 nC @ 10 V20 nC @ 10 V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tube
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drain to Source Voltage (Vdss)600 V500 V200 V400 V
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
FET Feature----
Vgs(th) (Max) @ Id4V @ 250µA4.5V @ 250µA4V @ 250µA4V @ 250µA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)5A (Tc)4.8A (Tc)3.1A (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds229 pF @ 25 V490 pF @ 25 V260 pF @ 25 V350 pF @ 25 V
Base Product NumberSIHFR1SIHFR430SIHFR220SIHFR320

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