In stock: 8525 pcs
| Part Number |
SIHB35N60EF-GE3
 |
SIHB4N80E-GE3
 |
SIHD12N50E-GE3
 |
SIHD11N80AE-GE3
|
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) | 4.3A (Tc) | 10.5A (Tc) | 8A (Tc) | |
| Gate Charge (Qg) (Max) @ Vgs | 134 nC @ 10 V | 32 nC @ 10 V | 50 nC @ 10 V | 42 nC @ 10 V | |
| Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | D-Pak | TO-252AA | |
| Package | Bulk | Tube | Tube | Tube | |
| Input Capacitance (Ciss) (Max) @ Vds | 2568 pF @ 100 V | 622 pF @ 100 V | 886 pF @ 100 V | 804 pF @ 100 V | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Power Dissipation (Max) | 250W (Tc) | 69W (Tc) | 114W (Tc) | 78W (Tc) | |
| Rds On (Max) @ Id, Vgs | 97mOhm @ 17A, 10V | 1.27Ohm @ 2A, 10V | 380mOhm @ 6A, 10V | 450mOhm @ 5.5A, 10V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TA) | -55°C ~ 150°C (TJ) | |
| FET Feature | - | - | - | - | |
| Drain to Source Voltage (Vdss) | 600 V | 800 V | 550 V | 800 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | |
| Base Product Number | SIHB35 | SIHB4 | SIHD12 | SIHD11 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Series | EF | E | E | E |
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