In stock: 16890 pcs
| Part Number |
SIE812DF-T1-E3
 |
SIE822DF-T1-GE3
 |
SIE806DF-T1-GE3
|
SIE802DF-T1-GE3
|
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | |
| Drain to Source Voltage (Vdss) | 40 V | 20 V | 30 V | 30 V | |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V | 3.4mOhm @ 18.3A, 10V | 1.7mOhm @ 25A, 10V | 1.9mOhm @ 23.6A, 10V | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | |
| Base Product Number | SIE812 | SIE822 | SIE806 | SIE802 | |
| Supplier Device Package | 10-PolarPAK® (L) | 10-PolarPAK® (S) | 10-PolarPAK® (L) | 10-PolarPAK® (L) | |
| Package / Case | 10-PolarPAK® (L) | 10-PolarPAK® (S) | 10-PolarPAK® (L) | 10-PolarPAK® (L) | |
| Input Capacitance (Ciss) (Max) @ Vds | 8300 pF @ 20 V | 4200 pF @ 10 V | 13000 pF @ 15 V | 7000 pF @ 15 V | |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) | 5.2W (Ta), 104W (Tc) | 5.2W (Ta), 125W (Tc) | 5.2W (Ta), 125W (Tc) | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 2V @ 250µA | 2.7V @ 250µA | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| FET Feature | - | - | - | - | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | 78 nC @ 10 V | 250 nC @ 10 V | 160 nC @ 10 V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | 50A (Tc) | 60A (Tc) | 60A (Tc) | |
| Vgs (Max) | ±20V | ±20V | ±12V | ±20V | |
| Series | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
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