In stock: 18506 pcs
| Part Number |
SIDR668DP-T1-GE3
 |
SIDR638DP-T1-GE3
 |
SIDR680ADP-T1-RE3
|
SIDR638DP-T1-RE3
|
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | |
| Series | TrenchFET® Gen IV | TrenchFET® Gen IV | TrenchFET® Gen IV | TrenchFET® Gen IV | |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V | 0.88mOhm @ 20A, 10V | 2.88mOhm @ 20A, 10V | 0.88mOhm @ 20A, 10V | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Vgs (Max) | ±20V | +20V, -16V | ±20V | +20V, -16V | |
| Current - Continuous Drain (Id) @ 25°C | 23.2A (Ta), 95A (Tc) | 100A (Tc) | 30.7A (Ta), 137A (Tc) | 64.6A (Ta), 100A (Tc) | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | |
| Supplier Device Package | PowerPAK® SO-8DC | PowerPAK® SO-8DC | PowerPAK® SO-8DC | PowerPAK® SO-8DC | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) | 125W (Tc) | 6.25W (Ta), 125W (Tc) | 6.25W (Ta), 125W (Tc) | |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA | 2.3V @ 250µA | 3.5V @ 250µA | 2.3V @ 250µA | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 50 V | 10500 pF @ 20 V | 4415 pF @ 40 V | 10500 pF @ 20 V | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V | 4.5V, 10V | 7.5V, 10V | 4.5V, 10V | |
| FET Feature | - | - | - | - | |
| Drain to Source Voltage (Vdss) | 100 V | 40 V | 80 V | 40 V | |
| Base Product Number | SIDR668 | SIDR638 | SIDR680 | - | |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V | 204 nC @ 10 V | 83 nC @ 10 V | 204 nC @ 10 V |
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