SIDR140DP-T1-GE3

MOSFET N-CH 25V 79A/100A PPAK

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Specifications
Part Number:SIDR140DP-T1-GE3
Manufacturer:Vishay Siliconix
Description:MOSFET N-CH 25V 79A/100A PPAK
RoHs Status:
Nkesp Part Number:73D-SIDR140DP-T1-GE3
Part Status25723 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:2.1V @ 250µA
Vgs (Max):+20V, -16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8DC
Series:TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:0.67mOhm @ 20A, 10V
Power Dissipation (Max):6.25W (Ta), 125W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:79A (Ta), 100A (Tc)
Base Product Number:SIDR140
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In stock: 25723 pcs

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Data sheet

Product Comparison

Part Number SIDR140DP-T1-GE3
SIDR140DP-T1-GE3
SIDR392DP-T1-GE3
SIDR392DP-T1-GE3
SIDR402EP-T1-RE3
SIDR402EP-T1-RE3
SIDR570EP-T1-RE3
SIDR570EP-T1-RE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Rds On (Max) @ Id, Vgs0.67mOhm @ 20A, 10V0.62mOhm @ 20A, 10V0.88mOhm @ 20A, 10V7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C79A (Ta), 100A (Tc)82A (Ta), 100A (Tc)65.2A (Ta), 291A (Tc)30.8A (Ta), 90.9A (Tc)
Power Dissipation (Max)6.25W (Ta), 125W (Tc)6.25W (Ta), 125W (Tc)7.5W (Ta), 150W (Tc)7.5W (Ta), 150W (Tc)
SeriesTrenchFET® Gen IVTrenchFET® Gen IVTrenchFET®TrenchFET® Gen V
Vgs(th) (Max) @ Id2.1V @ 250µA2.2V @ 250µA2.3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V188 nC @ 10 V165 nC @ 10 V71 nC @ 10 V
FET Feature----
Base Product NumberSIDR140SIDR392--
Supplier Device PackagePowerPAK® SO-8DCPowerPAK® SO-8DCPowerPAK® SO-8DCPowerPAK® SO-8DC
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drain to Source Voltage (Vdss)25 V30 V40 V150 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds8150 pF @ 10 V9530 pF @ 15 V9100 pF @ 20 V3740 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V7.5V, 10V
Vgs (Max)+20V, -16V+20V, -16V+20V, -16V±20V

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