SIA419DJ-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Quantity
RFQ
Specifications
Part Number:SIA419DJ-T1-GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET P-CH 20V 12A PPAK SC70-6
RoHs Status:
Nkesp Part Number:73D-SIA419DJ-T1-GE3
Part Status4706 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:850mV @ 250µA
Vgs (Max):±5V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SC-70-6
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:30mOhm @ 5.9A, 4.5V
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Package / Case:PowerPAK® SC-70-6
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 5 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Base Product Number:SIA419
Download Details PDF:

In stock: 4706 pcs

Request Quote
Please click " QUICK RFQ " and provide your contact information,
or email us at [email protected].
We will respond promptly to your inquiry.
Vishay Siliconix
Quantity
QUICK RFQ

Data sheet

Product Comparison

Part Number SIA419DJ-T1-GE3
SIA419DJ-T1-GE3
SIA429DJT-T1-GE3
SIA429DJT-T1-GE3
SIA418DJ-T1-GE3
SIA418DJ-T1-GE3
SIA427DJ-T1-GE3
SIA427DJ-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Gate Charge (Qg) (Max) @ Vgs29 nC @ 5 V62 nC @ 8 V17 nC @ 10 V50 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V1.5V, 4.5V4.5V, 10V1.2V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 10 V1750 pF @ 10 V570 pF @ 15 V2300 pF @ 4 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Supplier Device PackagePowerPAK® SC-70-6PowerPAK® SC-70-6PowerPAK® SC-70-6PowerPAK® SC-70-6
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
FET Feature----
FET TypeP-ChannelP-ChannelN-ChannelP-Channel
Base Product NumberSIA419SIA429SIA418SIA427
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C12A (Tc)12A (Tc)12A (Tc)12A (Tc)
Rds On (Max) @ Id, Vgs30mOhm @ 5.9A, 4.5V20.5mOhm @ 6A, 4.5V18mOhm @ 9A, 10V16mOhm @ 8.2A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / CasePowerPAK® SC-70-6PowerPAK® SC-70-6PowerPAK® SC-70-6PowerPAK® SC-70-6
Vgs (Max)±5V±8V±20V±5V
Vgs(th) (Max) @ Id850mV @ 250µA1V @ 250µA2.4V @ 250µA800mV @ 250µA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)3.5W (Ta), 19W (Tc)3.5W (Ta), 19W (Tc)3.5W (Ta), 19W (Tc)3.5W (Ta), 19W (Tc)
Drain to Source Voltage (Vdss)20 V20 V30 V8 V

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Certifications & Memberships

We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >

Hot Parts

0 RFQ
Shopping cart (0 Items)
It is empty.
Compare List (0 Items)
It is empty.
Feedback

Your feedback is very important! On this website, we value user experience and strive for continuous improvement.
Please share your feedback with us through our feedback form, and we will respond promptly.
Thank you for choosing us.

Subject
E-mail
Comments
Captcha
Drag or click to upload file
Upload File
types: .xls, .xlsx, .doc, .docx, .jpg, .png and .pdf.
Max file size: 10MB