SI9926BDY-T1-GE3

MOSFET 2N-CH 20V 6.2A 8-SOIC

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Specifications
Part Number:SI9926BDY-T1-GE3
Manufacturer:Vishay Siliconix
Description:MOSFET 2N-CH 20V 6.2A 8-SOIC
RoHs Status:
Nkesp Part Number:73D-SI9926BDY-T1-GE3
Part Status4320 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:1.5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:20mOhm @ 8.2A, 4.5V
Power - Max:1.14W
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:6.2A
Configuration:2 N-Channel (Dual)
Base Product Number:SI9926
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In stock: 4320 pcs

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Product Comparison

Part Number SI9926BDY-T1-GE3
SI9926BDY-T1-GE3
SI9933CDY-T1-GE3
SI9933CDY-T1-GE3
SI9926DY
SI9926DY
SI9926CDY-T1-E3
SI9926CDY-T1-E3
ManufacturerVishay SiliconixVishay SiliconixFairchild SemiconductorVishay Siliconix
Rds On (Max) @ Id, Vgs20mOhm @ 8.2A, 4.5V58mOhm @ 4.8A, 4.5V30mOhm @ 6.5A, 4.5V18mOhm @ 8.3A, 4.5V
Configuration2 N-Channel (Dual)2 P-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds-665pF @ 10V700pF @ 10V1200pF @ 10V
Power - Max1.14W3.1W900mW (Ta)3.1W
Supplier Device Package8-SOIC8-SOIC8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Base Product NumberSI9926SI9933SI9926SI9926
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V26nC @ 10V10nC @ 4.5V33nC @ 10V
Vgs(th) (Max) @ Id1.5V @ 250µA1.4V @ 250µA1.5V @ 250µA1.5V @ 250µA
SeriesTrenchFET®TrenchFET®-TrenchFET®
FET FeatureLogic Level GateLogic Level Gate-Logic Level Gate
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Operating Temperature-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)Tape & Reel (TR)BulkTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C6.2A4A6.5A (Ta)8A
Drain to Source Voltage (Vdss)20V20V20V20V

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