SI8417DB-T2-E1

MOSFET P-CH 12V 14.5A 6MICROFOOT

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Specifications
Part Number:SI8417DB-T2-E1
Manufacturer:Vishay Siliconix
Description:MOSFET P-CH 12V 14.5A 6MICROFOOT
RoHs Status:
Nkesp Part Number:73D-SI8417DB-T2-E1
Part Status4315 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:900mV @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-Micro Foot™ (1.5x1)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:21mOhm @ 1A, 4.5V
Power Dissipation (Max):2.9W (Ta), 6.57W (Tc)
Package / Case:6-MICRO FOOT®CSP
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2220 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 5 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Tc)
Base Product Number:SI8417
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In stock: 4315 pcs

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Product Comparison

Part Number SI8417DB-T2-E1
SI8417DB-T2-E1
SI8407DB-T2-E1
SI8407DB-T2-E1
SI8409DB-T1-E1
SI8409DB-T1-E1
SI8424CDB-T1-E1
SI8424CDB-T1-E1
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Power Dissipation (Max)2.9W (Ta), 6.57W (Tc)1.47W (Ta)1.47W (Ta)1.1W (Ta), 2.7W (Tc)
Package / Case6-MICRO FOOT®CSP6-MICRO FOOT®CSP4-XFBGA, CSPBGA4-UFBGA, WLCSP
Vgs(th) (Max) @ Id900mV @ 250µA900mV @ 350µA1.4V @ 250µA800mV @ 250µA
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drain to Source Voltage (Vdss)12 V20 V30 V8 V
FET TypeP-ChannelP-ChannelP-ChannelN-Channel
Base Product NumberSI8417SI8407SI8409SI8424
Vgs (Max)±8V±8V±12V±5V
Supplier Device Package6-Micro Foot™ (1.5x1)6-Micro Foot™ (2.4x2)4-Microfoot4-Microfoot
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V1.8V, 4.5V2.5V, 4.5V1.2V, 4.5V
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
Current - Continuous Drain (Id) @ 25°C14.5A (Tc)5.8A (Ta)4.6A (Ta)6.3A (Ta)
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds2220 pF @ 6 V--2340 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs57 nC @ 5 V50 nC @ 4.5 V26 nC @ 4.5 V40 nC @ 4.5 V
Rds On (Max) @ Id, Vgs21mOhm @ 1A, 4.5V27mOhm @ 1A, 4.5V46mOhm @ 1A, 4.5V20mOhm @ 2A, 4.5V

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