In stock: 4534 pcs
| Part Number |
SI7980DP-T1-E3
 |
SI7960DP-T1-E3
 |
SI7956DP-T1-E3
|
SI7949DP-T1-GE3
|
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 10V | - | - | - | |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V | 75nC @ 10V | 26nC @ 10V | 40nC @ 10V | |
| FET Feature | - | Logic Level Gate | Logic Level Gate | Logic Level Gate | |
| Base Product Number | SI7980 | SI7960 | SI7956 | SI7949 | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 3V @ 250µA | 4V @ 250µA | 3V @ 250µA | |
| Drain to Source Voltage (Vdss) | 20V | 60V | 150V | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 8A | 6.2A | 2.6A | 3.2A | |
| Power - Max | 19.8W, 21.9W | 1.4W | 1.4W | 1.5W | |
| Supplier Device Package | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 5A, 10V | 21mOhm @ 9.7A, 10V | 105mOhm @ 4.1A, 10V | 64mOhm @ 5A, 10V | |
| Configuration | 2 N-Channel (Half Bridge) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 P-Channel (Dual) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Package / Case | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | |
| Series | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >
