SI7794DP-T1-GE3

MOSFET N-CH 30V 28.6A/60A PPAK

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Part Number:SI7794DP-T1-GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 30V 28.6A/60A PPAK
RoHs Status:
Nkesp Part Number:73D-SI7794DP-T1-GE3
Part Status4284 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:SkyFET®, TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:3.4mOhm @ 20A, 10V
Power Dissipation (Max):5W (Ta), 48W (Tc)
Package / Case:PowerPAK® SO-8
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2520 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
FET Type:N-Channel
FET Feature:Schottky Diode (Body)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:28.6A (Ta), 60A (Tc)
Base Product Number:SI7794
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In stock: 4284 pcs

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Data sheet

Product Comparison

Part Number SI7794DP-T1-GE3
SI7794DP-T1-GE3
SI7804DN-T1-GE3
SI7804DN-T1-GE3
SI7748DP-T1-GE3
SI7748DP-T1-GE3
SI7790DP-T1-GE3
SI7790DP-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds2520 pF @ 15 V-3770 pF @ 15 V4200 pF @ 20 V
Supplier Device PackagePowerPAK® SO-8PowerPAK® 1212-8PowerPAK® SO-8PowerPAK® SO-8
Vgs(th) (Max) @ Id2.5V @ 250µA1.8V @ 250µA2.7V @ 1mA2.5V @ 250µA
Base Product NumberSI7794SI7804SI7748SI7790
Drain to Source Voltage (Vdss)30 V30 V30 V40 V
Package / CasePowerPAK® SO-8PowerPAK® 1212-8PowerPAK® SO-8PowerPAK® SO-8
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Power Dissipation (Max)5W (Ta), 48W (Tc)1.5W (Ta)4.8W (Ta), 56W (Tc)5.2W (Ta), 69W (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET FeatureSchottky Diode (Body)---
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V13 nC @ 5 V92 nC @ 10 V95 nC @ 10 V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
SeriesSkyFET®, TrenchFET® Gen IIITrenchFET®SkyFET®, TrenchFET®TrenchFET®
Vgs (Max)±20V±20V±20V±25V
Rds On (Max) @ Id, Vgs3.4mOhm @ 20A, 10V18.5mOhm @ 10A, 10V4.8mOhm @ 15A, 10V4.5mOhm @ 15A, 10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Current - Continuous Drain (Id) @ 25°C28.6A (Ta), 60A (Tc)6.5A (Ta)50A (Tc)50A (Tc)

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