SI6473DQ-T1-E3

MOSFET P-CH 20V 6.2A 8TSSOP

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Specifications
Part Number:SI6473DQ-T1-E3
Manufacturer:Vishay / Siliconix
Description:MOSFET P-CH 20V 6.2A 8TSSOP
RoHs Status:
Nkesp Part Number:73D-SI6473DQ-T1-E3
Part Status4234 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:450mV @ 250µA (Min)
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSSOP
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:12.5mOhm @ 9.5A, 4.5V
Power Dissipation (Max):1.08W (Ta)
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 5 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Base Product Number:SI6473
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In stock: 4234 pcs

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Product Comparison

Part Number SI6473DQ-T1-E3
SI6473DQ-T1-E3
SI6469DQ-T1-GE3
SI6469DQ-T1-GE3
SI6467BDQ-T1-E3
SI6467BDQ-T1-E3
SI6467BDQ-T1-GE3
SI6467BDQ-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Package / Case8-TSSOP (0.173", 4.40mm Width)8-TSSOP (0.173", 4.40mm Width)8-TSSOP (0.173", 4.40mm Width)8-TSSOP (0.173", 4.40mm Width)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
Rds On (Max) @ Id, Vgs12.5mOhm @ 9.5A, 4.5V28mOhm @ 6A, 4.5V12.5mOhm @ 8A, 4.5V12.5mOhm @ 8A, 4.5V
Supplier Device Package8-TSSOP8-TSSOP8-TSSOP8-TSSOP
Base Product NumberSI6473SI6469SI6467SI6467
Gate Charge (Qg) (Max) @ Vgs70 nC @ 5 V40 nC @ 4.5 V70 nC @ 4.5 V70 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V8 V12 V12 V
Power Dissipation (Max)1.08W (Ta)1.5W (Ta)--
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V1.8V, 4.5V--
FET Feature----
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
PackageTape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)Cut Tape (CT)
Vgs(th) (Max) @ Id450mV @ 250µA (Min)450mV @ 250µA (Min)850mV @ 450µA850mV @ 450µA
Vgs (Max)±8V±8V--
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)6A (Ta)6.8A (Ta)6.8A (Ta)

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